Overview: PD - 93830B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676
RAD Hard HEXFET TECHNOLOGY
™ ® ID QPL Part Number 4.4A JANSR2N7466U3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such.. as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-0.
