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IRHNJ7230 - Radiation Hardened Power MOSFET

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Light weight.
  • Surface Mount.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 200V.
  • ID : 9.4A.
  • RDS(on),max : 0.40.
  • QG,max : 50nC Potential.

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Datasheet preview – IRHNJ7230

Datasheet Details

Part number IRHNJ7230
Manufacturer International Rectifier
File Size 438.69 KB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRHNJ7230 Datasheet
Additional preview pages of the IRHNJ7230 datasheet.

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Full PDF Text Transcription

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IRHNJ7230 Radiation Hardened Power MOSFET Surface Mount (SMD-0.5) 200V, 9.4A, N-channel, Rad Hard HEXFET™ Technology PD-93821C Features  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Light weight  Surface Mount  ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary  BVDSS: 200V  ID : 9.4A  RDS(on),max : 0.40  QG,max : 50nC Potential Applications  DC-DC converter  Motor drives  Thermal management  Electric propulsion SMD-0.5 Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
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