Datasheet Summary
- 93830B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω
IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676
RAD Hard HEXFET TECHNOLOGY
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ID QPL Part Number 4.4A JANSR2N7466U3
International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching...