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PD - 95588A
IRL1404PbF
HEXFET® Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
D
VDSS = 40V
RDS(on) = 4.0mΩ
G
S ID = 160A
Description
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRL1404PBF Datasheet
