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IRL1404ZLPbF - MOSFET

Download the IRL1404ZLPbF datasheet PDF. This datasheet also covers the IRL1404ZPbF variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL1404ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRL1404S N-Channel MOSFET INCHANGE
IRL1004 N-Channel MOSFET INCHANGE
IRL1004S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL1404ZL AUTOMOTIVE MOSFET
IRL1404Z AUTOMOTIVE MOSFET
IRL1404ZPbF MOSFET
IRL1404ZS AUTOMOTIVE MOSFET
IRL1404ZSPbF MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.