rmal Impedance, Junction-to-Case www.irf.com 5 Thermal Response (Z thJC ) IRL2203NS/LPbF 15V VDS L DRIVER RG 2V0GVS tp D.U.T IAS 0.01Ω + - VDD A Fig 12a. Uncl.

IRL2203NSPbF IRL2203NLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A‡ S The D2Pak is a surface mount.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET p.

IRL2203NL

IRL2203N

IRL2203NPBF

IRL2203NS

IRL2203NSPbF

IRL2203S

IRL2310

IRL2505

IRL2505L

IRL2505LPBF

IRL2505PBF

IRL2505S

IRL2505SPBF