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International Rectifier Electronic Components Datasheet

IRL2203NLPbF Datasheet

Power MOSFET

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PD - 95219A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l 100% RG Tested
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
IRL2203NSPbF
IRL2203NLPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 7.0m
ID = 116A‡
S
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
TO-262
IRL2203NSPbF IRL2203NLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
VGS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
ÙAvalanche Current
™Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
i116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RθJC
RθJA
k Parameter
Junction-to-Case
jkJunction-to-Ambient (PCB mount, steady state)
www.irf.com
Typ
–––
–––
Max
0.85
40
Units
°C/W
1
10/01/10


International Rectifier Electronic Components Datasheet

IRL2203NLPbF Datasheet

Power MOSFET

No Preview Available !

IRL2203NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Min Typ Max Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 7.0
fVGS = 10V, ID = 60A
––– ––– 10
fVGS = 4.5V, ID = 48A
1.0 ––– 3.0
73 ––– –––
V VDS = VGS, ID = 250µA
fS VDS = 25V, ID = 60A
–––
–––
–––
–––
25
250
µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
–––
–––
–––
–––
100
-100
nA
VGS = 16V
VGS = -16V
––– ––– 60
ID = 60A
––– ––– 14 nC VDS = 24V
––– ––– 33
VGS = 4.5V, See Fig. 6 and 13
0.2 ––– 3.0
––– 11 –––
VDD = 15V
––– 160 –––
ID = 60A
––– 23 –––
––– 66 –––
RG = 1.8
fVGS = 4.5V, See Fig. 10
LD Internal Drain Inductance
LS Internal Source Inductance
––– 4.5 –––
Between lead,
Nh 6mm (0.25in.)
––– 7.5 –––
from package
and center of die contact
Ciss Input Capacitance
––– 3290 –––
VGS = 0V
Coss Output Capacitance
––– 1270 ––– pF VDS = 25V
d g hCrss Reverse Transfer Capacitance
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
––– 1320 290
mJ IAS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
i––– ––– 116
MOSFET symbol
A showing the
––– ––– 400
––– ––– 1.2
integral reverse
p-n junction diode.
fV TJ = 25°C, IS = 60A, VGS = 0V
f––– 56 84 ns TJ = 25°C, IF = 60A
––– 110 170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 0.16mH RG = 25,
IAS = 60A, VGS=10V (See Figure 12)
ƒ ISD 60A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
2 www.irf.com


Part Number IRL2203NLPbF
Description Power MOSFET
Maker International Rectifier
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