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IRL2203NL - Power MOSFET

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • ay Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer ‚ -.
  • +  RG VGS.
  • dv/dt controlled by RG.
  • ISD controlled by Duty Factor "D".
  • D. U. T. - Device Under Test + VDD.
  • Reverse Polarity of D. U. T for P-Channel http://www. DataSheet4U. net/ Driver Gate Drive P. W. Period D= P. W. Period [VGS=10V ].
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recov.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
IRL2203NS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRL2203NS/L l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.