Datasheet4U Logo Datasheet4U.com

IRL2203NLPbF - Power MOSFET

Download the IRL2203NLPbF datasheet PDF. This datasheet also covers the IRL2203NSPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • form Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL2203NS/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL2203NSPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL2203NL Power MOSFET FreesCale
IRL2203N N-Channel MOSFET INCHANGE
IRL2203NS Power MOSFET FreesCale
IRL2203NS N-Channel MOSFET INCHANGE
IRL2505 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL2203NL Power MOSFET
IRL2203N Power MOSFET
IRL2203NPBF Power MOSFET
IRL2203NS Power MOSFET
IRL2203NSPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRL2203NSPbF IRL2203NLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A‡ S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.