Datasheet4U Logo Datasheet4U.com

IRL2203NL - Power MOSFET

General Description

utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL2203NL Power MOSFET FreesCale
IRL2203N N-Channel MOSFET INCHANGE
IRL2203NS Power MOSFET FreesCale
IRL2203NS N-Channel MOSFET INCHANGE
IRL2505 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL2203NLPbF Power MOSFET
IRL2203N Power MOSFET
IRL2203NPBF Power MOSFET
IRL2203NS Power MOSFET
IRL2203NSPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94394A IRL2203NS IRL2203NL l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l 100% RG Tested Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A‡ S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.