IRL2203NSPbF Datasheet | International Rectifier

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. IRL2203NSPb F IRL2203NLPb F HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.0mΩ ID = 116A‡ The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. D2Pak TO-262 IRL2203NSPb F IRL2203NLPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation PD @TC = 25°C Power Dissipation VGS IAR EAR dv/dt Linear Derating Factor Gate-to-Source Voltage ÙAvalanche Current ™Repetitive Avalanche Energy e Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max i116 82 400 3.8 180 1.2 ± 16 60 18 -55 to + 175 300 (1.6mm from case) Units W W W/°C V A m J V/ns °C Thermal Resistance Symbol RθJC RθJA k Parameter Junction-to-Case jk Junction-to-Ambient (PCB mount, steady state) .irf. Typ...