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PD - 95219A
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRL2203NSPbF IRL2203NLPbF
HEXFET® Power MOSFET D VDSS = 30V
RDS(on) = 7.0mΩ
ID = 116A
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The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
IRL2203NSPbF Datasheet
