Datasheet4U Logo Datasheet4U.com

IRL2310 - Power MOSFET

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.5V & 10V 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.
Published: |