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International Rectifier Electronic Components Datasheet

IRL3705ZSPbF Datasheet

Power MOSFET

No Preview Available !

Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
PD - 95579A
IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 8.0m
S ID = 75A
TO-220AB
D2Pak
TO-262
IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
www.irf.com
Max.
86
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.14
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
10/01/10


International Rectifier Electronic Components Datasheet

IRL3705ZSPbF Datasheet

Power MOSFET

No Preview Available !

IRL3705Z/S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
55 ––– –––
––– 0.055 –––
––– 6.5 8.0
––– ––– 11
––– ––– 12
1.0 ––– 3.0
150 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 40 60
––– 12 –––
––– 21 –––
––– 17 –––
––– 240 –––
––– 26 –––
––– 83 –––
––– 4.5 –––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 52A
emVGS = 5.0V, ID = 43A
eVGS = 4.5V, ID = 30A
V VDS = VGS, ID = 250µA
V VDS = 25V, ID = 52A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
ID = 43A
enC VDS = 44V
VGS = 5.0V
VDD = 28V
ns ID = 43A
eRG = 4.3
VGS = 5.0V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2880 –––
––– 420 –––
––– 220 –––
––– 1500 –––
––– 330 –––
––– 510 –––
and center of die contact
VGS = 0V
VDS = 25V
S
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 340
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 52A, VGS = 0V
e––– 16 24 ns TJ = 25°C, IF = 43A, VDD = 28V
––– 7.4 11 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com


Part Number IRL3705ZSPbF
Description Power MOSFET
Maker International Rectifier
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IRL3705ZSPbF Datasheet PDF






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