IRL3803VL Datasheet - International Rectifier

Power MOSFET

IRL3803VL Features

* -Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak

IRL3803VL General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi.

IRL3803VL Datasheet (247.41 KB)

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IRL3803VL

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International Rectifier

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247.41 KB

Description:

Power mosfet.
www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technolog.

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IRL3803VL Power MOSFET International Rectifier

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IRL3803VL Features

IRL3803VL General Description

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