Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area.This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.PD - 95449
IRL3803VSPbF IRL3803VLPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 5.5mΩ
ID = 140
Features
- . U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD] [ISD]
www. irf. com.
- VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
7
IRL3803VS/IRL3803VLPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 30 S W IT H L OT CODE 8024 AS S E MB LE D ON WW 02, 2000 IN T H E AS S E M B L Y L IN E ".