IRL3803VLPbF Datasheet - International Rectifier

Power MOSFET

IRL3803VLPbF Features

* .U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL3803VS/IRL3803VLPbF D2Pak Package Outline

IRL3803VLPbF General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides t.

IRL3803VLPbF Datasheet (270.41 KB)

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IRL3803VLPbF

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International Rectifier

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270.41 KB

Description:

Power mosfet.
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175°C Operating Temper.

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IRL3803VLPbF Power MOSFET International Rectifier

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IRL3803VLPbF Features

IRL3803VLPbF General Description

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