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IRL620 - POWER MOSFET

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Overview

Previous Datasheet Index Next Data Sheet PD -9.1217 IRL620 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V Fast Switching Ease of.