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IRL6283MPBF Datasheet – Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

StrongIRFET™ IRL6283MTRPbF Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application VDSS VGS 20V max ±12V max DirectFET® N-Channel Power MOSFET  Vgs(th) 0.8V Typical values (unless otherwise specified) RDS(on) RDS(on) RDS(on) 0.50mΩ@10V 0.65mΩ@4.5V 1.1mΩ@2.

Key Features

  • Environmentally Friendly Product.
  • RoHs compliant containing no Lead, no Bromide and no Halogen.
  • Very Low RDS(on) D G S S D MD DirectFET™.