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International Rectifier Electronic Components Datasheet

IRL8113LPbF Datasheet

Power MOSFET

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PD - 95582
IRL8113PbF
IRL8113SPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
VDSS
30V
IRL8113LPbF
HEXFET® Power MOSFET
RDS(on) max Qg (Typ.)
6.0m:
23nC
Benefits
l Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL8113
D2Pak
IRL8113S
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Max.
30
± 20
h105
74 h
420
110
57
0.76
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Notes  through ‡ are on page 12
www.irf.com
TO-262
IRL8113L
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/20/04


International Rectifier Electronic Components Datasheet

IRL8113LPbF Datasheet

Power MOSFET

No Preview Available !

IRL8113/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
–––
–––
–––
1.35
–––
–––
0.020
4.8
5.7
-5.0
–––
–––
6.0
7.1
2.25
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 21A
eVGS = 4.5V, ID = 17A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
86 ––– –––
––– 23 35
S VDS = 15V, ID = 17A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 6.0 –––
VDS = 15V
––– 2.0 ––– nC VGS = 4.5V
––– 8.3 –––
ID = 17A
––– 6.7 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 10 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 14 ––– nC VDS = 16V, VGS = 0V
––– 14 –––
eVDD = 15V, VGS = 4.5V
––– 38 –––
ID = 17A
––– 18 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.0 –––
Ciss Input Capacitance
––– 2840 –––
VGS = 0V
Coss Output Capacitance
––– 620 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 290 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
220
17
11
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
hMin. Typ. Max. Units
Conditions
––– ––– 105
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 420
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 17A, VGS = 0V
e––– 18 27 ns TJ = 25°C, IF = 17A, VDD = 15V
––– 7.2 11 nC di/dt = 100A/µs
www.irf.com


Part Number IRL8113LPbF
Description Power MOSFET
Maker International Rectifier
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