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IRLF230 Datasheet N-CHANNEL TRANSISTORS

Manufacturer: International Rectifier (now Infineon)

Overview

Provisional Data Sheet No.

PD-9.1614 HEXFET® TRANSISTOR IRLF230 N-CHANNEL 200Volt, 0.40 Ω, HEXFET The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V.

In addition to the well established characteristics of HEXFETs, they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors.

Key Features

  • n Dynamic dv/dt Rating n Logic Level Gate Drive n RDS(on) Specific at VGS = 4V & 5V n 150°C Operating Temperature n Fast Switching n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt.
  • TJ TSTG Operating Junction Storage Temper.