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IRLHM630PbF
HEXFET® Power MOSFET
VDS VGS max RDS(on) max
(@VGS = 4.5V)
30 ±12 3.5 4.5 41 40h
V V mΩ mΩ nC A
D 5 D 6 D 7 D 8
4 G 3 S 2 S 1 S
RDS(on) max
(@VGS = 2.5V)
Q g (typical) ID
(@Tc(Bottom) = 25°C)
PQFN 3.3mm x 3.3mm
Applications
• Battery Operated DC Motor Inverter MOSFET • Secondary Side Synchronous Rectification MOSFET
Features and Benefits Features Low RDSon (<3.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IRLHM630TRPBF IRLHM630TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.