IRLHM630PBF Overview
IRLHM630PbF HEXFET® Power MOSFET VDS VGS max RDS(on) max (@VGS = 4.5V) 30 ±12 3.5 4.5 41 40h V V mΩ mΩ nC A D 5 D 6 D 7 D 8 4 G 3 S 2 S 1 S RDS(on) max (@VGS = 2.5V) Q g (typical) ID (@Tc(Bottom) = 25°C) PQFN 3.3mm x 3.3mm Applications Battery Operated DC.