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PD - 97565A
IRLHM620PbF
VDS VGS max RDS(on) max
(@VGS = 4.5V)
20 ±12 2.5 3.5 52 40h
V V
D 5 4 G 3 S 2 S 1 S
HEXFET® Power MOSFET
mΩ mΩ nC A
D 6 D 7 D 8
RDS(on) max
(@VGS = 2.5V)
3.3mm x 3.3mm PQFN
Qg (typical) ID
(@Tc(Bottom) = 25°C)
Applications
• Battery Operated DC Motor Inverter MOSFET • Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Features Low RDSon (<2.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.
IRLHM620PBF Datasheet
