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IRLHM630PBF - Power MOSFET

Key Features

  • Features Low RDSon (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRLHM630PbF HEXFET® Power MOSFET VDS VGS max RDS(on) max (@VGS = 4.5V) 30 ±12 3.5 4.5 41 40h V V mΩ mΩ nC A D 5 D 6 D 7 D 8 4 G 3 S 2 S 1 S RDS(on) max (@VGS = 2.5V) Q g (typical) ID (@Tc(Bottom) = 25°C) PQFN 3.3mm x 3.3mm Applications • Battery Operated DC Motor Inverter MOSFET • Secondary Side Synchronous Rectification MOSFET Features and Benefits Features Low RDSon (<3.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLHM630TRPBF IRLHM630TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.