Datasheet Details
| Part number | IRLI2203N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 114.68 KB |
| Description | POWER MOSFET |
| Datasheet |
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| Part number | IRLI2203N |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 114.68 KB |
| Description | POWER MOSFET |
| Datasheet |
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l l IRLI2203N HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.007Ω G ID = 61A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
PD - 9.1378A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.
= 4.
| Part Number | Description |
|---|---|
| IRLI2203NPBF | POWER MOSFET |
| IRLI2203G | POWER MOSFET |
| IRLI2505 | POWER MOSFET |
| IRLI2910 | POWER MOSFET |
| IRLI2910PBF | Power MOSFET |
| IRLI3103 | POWER MOSFET |
| IRLI3215PBF | Advanced Process Technology |
| IRLI3303 | HEXFET Power MOSFET |
| IRLI3615 | HEXFET Power MOSFET |
| IRLI3615PBF | POWER MOSFET |