IRLML6401 Datasheet | International Rectifier

l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) G1 l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated S2 l Lead-Free l RoHS pliant, Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23...