IRLML6402 Datasheet - International Rectifier

IRLML6402 HEXFET Power MOSFET

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer w.

IRLML6402 Features

* rmation Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) TR FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .

IRLML6402_InternationalRectifier.pdf