IRLZ24NL - Power MOSFET

International Rectifier

The IRLZ24NL by International Rectifier is a Power MOSFET. Below is the official datasheet preview.

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IRLZ24NL Power MOSFET by International Rectifier - Datasheet Preview — Official preview page of the **IRLZ24NL** Power MOSFET datasheet (International Rectifier).

Datasheet Details

Part number	IRLZ24NL
Manufacturer	International Rectifier
File Size	372.89 KB
Description	Power MOSFET
Datasheet	IRLZ24NL_InternationalRectifier.pdf
Additional preview pages of the IRLZ24NL datasheet.

IRLZ24NL Product details

Description

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power pack

Features

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dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test + V DD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channe.

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Published: Sep 9, 2006 |