Datasheet Details
| Part number | IRLZ24NL |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 372.89 KB |
| Description | Power MOSFET |
| Download | IRLZ24NL Download (PDF) |
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Overview: www.DataSheet4U.com PD - 91358E IRLZ24NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully.
| Part number | IRLZ24NL |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 372.89 KB |
| Description | Power MOSFET |
| Download | IRLZ24NL Download (PDF) |
|
|
|
l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
Compare IRLZ24NL distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRLZ24N | N-Channel MOSFET | INCHANGE |
|
IRLZ24NS | N-Channel MOSFET | INCHANGE |
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IRLZ24 | N-Channel MOSFET | Samsung Electronics |
 |
IRLZ24 | Power MOSFET | Vishay |
|
IRLZ24A | Advanced Power MOSFET | Samsung Electronics |
| Part Number | Description |
|---|---|
| IRLZ24NLPBF | Power MOSFET |
| IRLZ24N | HEXFET POWER MOSFET |
| IRLZ24NPBF | Power MOSFET |
| IRLZ24NS | Power MOSFET |
| IRLZ24NSPBF | Power MOSFET |
| IRLZ24 | HEXFET POWER MOSFET |
| IRLZ24S | HEXFET POWER MOSFET |
| IRLZ14 | Power MOSFET |
| IRLZ34 | HEXFET POWER MOSFET |
| IRLZ34L | HEXFET Power MOSFET |