IRLZ24NS - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRLZ24NS
Manufacturer	International Rectifier
File Size	372.89 KB
Description	Power MOSFET
Datasheet	IRLZ24NS Datasheet
Note	This datasheet PDF includes multiple part numbers: IRLZ24NS, IRLZ24NL. Please refer to the document for exact specifications by model.
Additional preview pages of the IRLZ24NS datasheet.

Product details

Description

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power pack

Features

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dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test + V DD et4U. com DataShee DataSheet4U. com Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channe.

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Other Datasheets by International Rectifier

IRLZ24NSPBF - Power MOSFET
IRLZ24N - HEXFET POWER MOSFET
IRLZ24NL - Power MOSFET
IRLZ24NLPBF - Power MOSFET
IRLZ24NPBF - Power MOSFET
IRLZ24 - HEXFET POWER MOSFET

Published: Sep 9, 2006 |