Datasheet Details
| Part number | IRLZ24NLPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 503.35 KB |
| Description | Power MOSFET |
| Datasheet | IRLZ24NLPBF IRLZ24NSPBF Datasheet (PDF) |
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Overview: www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRLZ24NLPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 503.35 KB |
| Description | Power MOSFET |
| Datasheet | IRLZ24NLPBF IRLZ24NSPBF Datasheet (PDF) |
|
|
|
l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRLZ24N | N-Channel MOSFET | INCHANGE |
|
IRLZ24NS | N-Channel MOSFET | INCHANGE |
 |
IRLZ24 | N-Channel MOSFET | Samsung Electronics |
 |
IRLZ24 | Power MOSFET | Vishay |
|
IRLZ24A | Advanced Power MOSFET | Samsung Electronics |
| Part Number | Description |
|---|---|
| IRLZ24NL | Power MOSFET |
| IRLZ24N | HEXFET POWER MOSFET |
| IRLZ24NPBF | Power MOSFET |
| IRLZ24NS | Power MOSFET |
| IRLZ24NSPBF | Power MOSFET |
| IRLZ24 | HEXFET POWER MOSFET |
| IRLZ24S | HEXFET POWER MOSFET |
| IRLZ14 | Power MOSFET |
| IRLZ34 | HEXFET POWER MOSFET |
| IRLZ34L | HEXFET Power MOSFET |