IRLZ24NLPBF Overview
l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely...
IRLZ24NLPBF Key Features
- Surface Mount (IRLZ24NS)
- Low-profile through-hole (IRLZ24NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
