IRLZ34N Datasheet - International Rectifier

N-channel Power MOSFET

IRLZ34N Features

* Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.DataSheet4U.com IRLZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 . 8 7 ( .1 1 3 ) 2 . 6 2 ( .1 0 3 ) 1 0 . 5 4 (. 4 1

IRLZ34N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLZ34N Datasheet (136.44 KB)

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Part number:

IRLZ34N

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International Rectifier

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136.44 KB

Description:

N-channel power mosfet.
www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1.

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IRLZ34N N-channel Power MOSFET International Rectifier

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IRLZ34N Features

IRLZ34N General Description

Datasheet Details

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