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IRLZ34NLPBF - Power MOSFET

Download the IRLZ34NLPBF datasheet PDF. This datasheet also covers the IRLZ34NSPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced pro

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLZ34NSPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLZ34N N-Channel MOSFET NXP
IRLZ34N N-Channel MOSFET INCHANGE
IRLZ34NS N-Channel MOSFET INCHANGE
IRLZ34 Power MOSFET Vishay
IRLZ34L Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ34NL N-Channel MOSFET
IRLZ34N N-channel Power MOSFET
IRLZ34NPBF Power MOSFET
IRLZ34NS HEXFET Power MOSFET
IRLZ34NSPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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