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IRLZ34NSPBF - Power MOSFET

Description

HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced pro

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Other Datasheets by International Rectifier (now Infineon)

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www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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