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JANSR2N7583U2 - POWER MOSFET

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2).

Features

  • Single Event Effect (SEE) Hardened.
  • Low RDS(on).
  • Low Total Gate Charge.
  • Simple Drive Requi.

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Full PDF Text Transcription

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94342I IRHNA67260 JANSR2N7583U2 200V, N-CHANNEL REF: MIL-PRF-19500/760 R6 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100 kRads(Si) IRHNA63260 300 kRads(Si) RDS(on) 0.028 0.028 ID 56A* 56A* QPL Part Number JANSR2N7583U2 JANSF2N7583U2 SMD-2 Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.
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