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JANSR2N7583U2A Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHNS67260 (JANSR2N7583U2A) Radiation Hardened Power MOSFET Surface Mount (SupIR-SMD™) 200V, 56A, N-channel, R6 Technology.

General Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV·cm2/mg.

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.

Key Features

  • Single event effect (SEE) hardened (up to LET of 90 MeV.
  • cm2/mg).
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Ceramic package.
  • Light weight.
  • Surface mount.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 200V.
  • ID : 56A.
  • RDS(on),max : 28m.
  • QGmax : 240nC.
  • REF: MIL-PRF-19500/760 Potential.

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