Datasheet Details
| Part number | JANSR2N7583U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 742.21 KB |
| Description | POWER MOSFET |
| Datasheet | JANSR2N7583U2-InternationalRectifier.pdf |
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Overview: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94342I IRHNA67260 JANSR2N7583U2 200V, N-CHANNEL REF: MIL-PRF-19500/760 R6 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100 kRads(Si) IRHNA63260 300 kRads(Si) RDS(on) 0.028 0.
| Part number | JANSR2N7583U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 742.21 KB |
| Description | POWER MOSFET |
| Datasheet | JANSR2N7583U2-InternationalRectifier.pdf |
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IR HiRel R6 technology provides high performance power MOSFETs for space applications.
These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.
| Part Number | Description |
|---|---|
| JANSR2N7583U2A | Radiation Hardened Power MOSFET |
| JANSR2N7584T1 | POWER MOSFET |
| JANSR2N7587U3 | N-Channel Power MOSFET |
| JANSR2N7500U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| JANSR2N7519T3 | 30V P-Channel MOSFET |
| JANSR2N7520T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7524T1 | P-CHANNEL POWER MOSFET |
| JANSR2N7547T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7549U2 | P-CHANNEL POWER MOSFET |
| JANSR2N7550U2 | POWER MOSFET |