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JANTXV2N7222 - POWER MOSFET

Download the JANTXV2N7222 datasheet PDF. This datasheet also covers the JANTX2N7222 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANTX2N7222_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 90492D POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM440 IRFM440 JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.85 Ω ID 8.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
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