SI3443DVPBF Datasheet | International Rectifier

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% pared to the SOT-23. PD-95240 Si3443DVPb F HEXFET® Power MOSFET A 1 6D VDSS = -20V 2 5D 3 4S Top View RDS(on) = 0.065Ω TSOP-6 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain-...