Si3443BDV - P-Channel 2.5-V (G-S) MOSFET

Vishay

Key Features

(A) - 4.7 - 3.8 - 3.7.
Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (3) G (4) S 3 mm 2 5 3 2.85 mm 4 Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B (1, 2, 5, 6) D P-Channel MOSFET.

Si3443BDV p-channel 2.5-v (g-s) mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	Si3443BDV
Manufacturer	Vishay
File Size	288.56 KB
Description	P-Channel 2.5-V (G-S) MOSFET
Datasheet	Si3443BDV Datasheet

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Si3443BDV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I 0.060 at VGS = - 4.5 V - 20 0.090 at VGS = - 2.7 V 0.100 at VGS = - 2.5 V D FEATURES (A) - 4.7 - 3.8 - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View 1 6 (3) G (4) S 3 mm 2 5 3 2.