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Si3445ADV
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−8
rDS(on) (W)
0.042 @ VGS = −4.5 V 0.060 @ VGS = −2.5 V 0.080 @ VGS = −1.8 V
ID (A)
−5.8 −4.9 −4.2
TSOP-6 Top View
1 3 mm 6 5 (3) G
(4) S
2
3
4
2.85 mm Ordering Information: Si3445ADV-T1—E3 Marking Code: C5XXX (1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 secs
Steady State
−8 "8
Unit
V
−5.8 −4.7 −20 −1.7 2.0 1.3 −55 to 150
−4.
SI3445ADV Datasheet
