Datasheet Details
| Part number | SI3443DV |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 127.20 KB |
| Description | Power MOSFET |
| Datasheet | SI3443DV-InternationalRectifier.pdf |
|
|
Overview: PD- 93795B Si3443DV HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated D1 D2 G3 A 6D 5D VDSS = -20V 4 S RDS(on) = 0.
| Part number | SI3443DV |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 127.20 KB |
| Description | Power MOSFET |
| Datasheet | SI3443DV-InternationalRectifier.pdf |
|
|
|
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Top View The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SI3443DV | MOSFET | Vishay |
 |
Si3443DV | P-Channel MOSFET | ON Semiconductor |
|
SI3443DDV | MOSFET | Vishay |
|
Si3443BDV | P-Channel 2.5-V (G-S) MOSFET | Vishay |
 |
Si3443BDV | P-Channel 20-V (D-S) MOSFET | Freescale |
| Part Number | Description |
|---|---|
| SI3443DVPBF | Power MOSFET |