Datasheet Summary
PD- 93795B
HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l -2.5V Rated
D1 D2 G3
A 6D 5D
VDSS = -20V
4 S RDS(on) = 0.065Ω
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Top View
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board...
