Datasheet Summary
June 1998
FSJ9160D, FSJ9160R
44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Features
- 44A, -100V, rDS(ON) = 0.055Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current
- 10.0nA Per-RAD(Si)/s Typically
- Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K mercial...