FSJ9160D Datasheet | Intersil

Features - 44A, -100V, r DS(ON) = 0.055Ω - Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36Me V/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias - Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM - Photo Current - 10.0n A Per-RAD(Si)/s Typically - Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K mercial FSJ9160D1 10K TXV FSJ9160D3 100K mercial FSJ9160R1 100K FSJ9160R3 100K Space FSJ9160R4 Formerly available as type TA17766. Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for...