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FSJ9160D - P-Channel Power MOSFETs

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for c

Features

  • 44A, -100V, rDS(ON) = 0.055Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 10.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD S.

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Datasheet preview – FSJ9160D

Datasheet Details

Part number FSJ9160D
Manufacturer Intersil
File Size 45.96 KB
Description P-Channel Power MOSFETs
Datasheet download datasheet FSJ9160D Datasheet
Additional preview pages of the FSJ9160D datasheet.

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Full PDF Text Transcription

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June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 44A, -100V, rDS(ON) = 0.055Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 10.
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