FSJ9160R Datasheet P-channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	FSJ9160R
Manufacturer	Intersil (now Renesas)
File Size	45.96 KB
Description	P-Channel Power MOSFETs
Datasheet	FSJ9160R FSJ9160D Datasheet (PDF)

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for c

Key Features

44A, -100V, rDS(ON) = 0.055Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 10.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD S.

FSJ9160R Distributor & Price

Compare FSJ9160R distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Intersil (now Renesas)

Part Number	Description
FSJ9160D	P-Channel Power MOSFETs
FSJ160D	N-Channel Power MOSFETs
FSJ160R	N-Channel Power MOSFETs
FSJ163R	N-Channel Power MOSFETs
FSJ260D	N-Channel Power MOSFETs
FSJ260R	N-Channel Power MOSFETs
FSJ264D	N-Channel Power MOSFETs
FSJ264R	N-Channel Power MOSFETs