• Part: FSJ260D
  • Description: N-Channel Power MOSFETs
  • Manufacturer: Intersil
  • Size: 46.02 KB
Download FSJ260D Datasheet PDF
FSJ260D page 2
Page 2
FSJ260D page 3
Page 3

Datasheet Summary

FSJ260D, FSJ260R June 1998 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features - 44A, 200V, rDS(ON) = 0.050Ω - Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias - Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM - Photo Current - 17nA Per-RAD(Si)/s Typically - Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K...