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FSJ264D Datasheet N-channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: FSJ264D, FSJ264R June 1998 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

General Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and militar

Key Features

  • 33A, 250V, rDS(ON) = 0.080Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 21nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

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