FSJ264D - N-Channel Power MOSFETs

Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and militar

33A, 250V, rDS(ON) = 0.080Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 21nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

Intersil

Part number	FSJ264D
Manufacturer	Intersil
File Size	47.76 KB
Description	N-Channel Power MOSFETs
Datasheet	FSJ264D Datasheet
Additional preview pages of the FSJ264D datasheet.

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FSJ9260R - 27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs (Intersil Corporation)

Other Datasheets by Intersil

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FSJ264D, FSJ264R June 1998 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 33A, 250V, rDS(ON) = 0.

Published: Jun 3, 2018 |