FSJ264R Datasheet N-channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

Overview: FSJ264D, FSJ264R June 1998 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	FSJ264R
Manufacturer	Intersil (now Renesas)
File Size	47.76 KB
Description	N-Channel Power MOSFETs
Datasheet	FSJ264R FSJ264D Datasheet (PDF)

General Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and militar

Key Features

33A, 250V, rDS(ON) = 0.080Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 21nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

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More Datasheets from Intersil (now Renesas)

Part Number	Description
FSJ264D	N-Channel Power MOSFETs
FSJ260D	N-Channel Power MOSFETs
FSJ260R	N-Channel Power MOSFETs
FSJ160D	N-Channel Power MOSFETs
FSJ160R	N-Channel Power MOSFETs
FSJ163R	N-Channel Power MOSFETs
FSJ9160D	P-Channel Power MOSFETs
FSJ9160R	P-Channel Power MOSFETs