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ISL70024SEH Datasheet, Intersil

ISL70024SEH transistor equivalent, 7.5a enhancement mode gan power transistor.

ISL70024SEH Avg. rating / M : 1.0 rating-12

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ISL70024SEH Datasheet

Features and benefits


* Very low rDS(ON) 45mΩ (typical)
* Ultra low total gate charge 2.5nC (typical)
* SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, V.

Application

for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron.

Image gallery

ISL70024SEH Page 1 ISL70024SEH Page 2 ISL70024SEH Page 3

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