ISL70020SEH Datasheet | Intersil

ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode Ga N Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode Ga N power transistors. These Ga N FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the Ga N allows for very low r DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By bining the exceptional performance of the Ga N FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications. Applications - Switching regulation - Motor drives - Relay drives - Inrush protection - Down hole drilling High reliability industrial Features - Very low r DS(ON) 3.5mΩ (typical) - Ultra low total gate charge 19n C (typical) - ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) - ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) - SEE hardness (see the SEE report for details) ○ SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4Me V- cm2/mg(Si) - Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package ○ Package area: 42mm2 - Full military-temperature range operation ○ TA = -55°C to +125°C ○ TJ = -55°C to +150°C - Qualified to Renesas Rad Hard Ga N FET Screening and QCI Flow (R34TB0003EU) ○ All screening and QCI are in accordance with MIL-PRF-38535L Class-V Figure 1. ISL70020SEH 4 Ld SMD Package r DS(ON) (mΩ) ID = 1A ID =...