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ISL70020SEH - 65A Enhancement Mode GaN Power Transistors

Key Features

  • Very low rDS(ON) 3.5mΩ (typical).
  • Ultra low total gate charge 19nC (typical).
  • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • SEE hardness (see the SEE report for details) ○ SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV.
  • cm2/mg(Si).
  • Ultra small hermetically sealed 4.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
ISL70023SEH 60A Enhancement Mode GaN Power Transistor
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Full PDF Text Transcription (Reference)

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Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.