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ISL70024SEH Datasheet 7.5a Enhancement Mode Gan Power Transistor

Manufacturer: Intersil (now Renesas)

Overview: ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By bining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.

Key Features

  • Very low rDS(ON) 45mΩ (typical).
  • Ultra low total gate charge 2.5nC (typical).
  • SEE hardness (see SEE report for details).
  • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV.
  • cm2/mg(Si).
  • ISL70024SEH radiation acceptance (see TID report).
  • High dose rate (50-300rad(Si)/s): 100krad(Si).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73024SEH radiation acceptance (see TID report).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • Ultra small h.

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