Datasheet4U Logo Datasheet4U.com

ISL70024SEH - 7.5A Enhancement Mode GaN Power Transistor

General Description

3.

.

Key Features

  • Very low rDS(ON) 45mΩ (typical).
  • Ultra low total gate charge 2.5nC (typical).
  • SEE hardness (see SEE report for details).
  • SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV.
  • cm2/mg(Si).
  • ISL70024SEH radiation acceptance (see TID report).
  • High dose rate (50-300rad(Si)/s): 100krad(Si).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • ISL73024SEH radiation acceptance (see TID report).
  • Low dose rate (0.01rad(Si)/s): 75krad(Si).
  • Ultra small h.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ISL70001SRH Radiation Hardened and SEE Hardened 6A Synchronous Buck Regulator Intersil Corporation
ISL71090SEHF25 Radiation Hardened Ultra Low Noise / Precision Voltage Reference Intersil Corporation
ISL7119RH Radiation Hardened High Speed Dual Voltage Comparator Intersil Corporation
ISL7124SRH Quad Operational Amplifiers Intersil Corporation
ISL72026SEH 3.3V Radiation Tolerant CAN Transceiver Intersil Corporation

Other Datasheets by Intersil (now Renesas)

Part Number Description
ISL70020SEH 65A Enhancement Mode GaN Power Transistors
ISL70023SEH 60A Enhancement Mode GaN Power Transistor
ISL70001ASEH Rad Hard and SEE Hard 6A Synchronous Buck Regulator
ISL70001SEH Radiation Hardened and SEE Hardened 6A Synchronous Buck Regulator
ISL70002SEH Radiation Hardened and SEE Hardened 12A Synchronous Buck Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode GaN Power Transistor Datasheet The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.