ISL70024SEH Datasheet | Intersil

ISL70024SEH, ISL73024SEH 200V, 7.5A Enhancement Mode Ga N Power Transistor The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode Ga N power transistors. These Ga N FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation. Ga N’s exceptionally high electron mobility and low temperature coefficient allows for very low r DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By bining the exceptional performance of the Ga N FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications. Applications - Switching regulation - Motor drives - Relay drives - Inrush protection - Down hole drilling - High reliability industrial Features - Very low r DS(ON) 45mΩ (typical) - Ultra low total gate charge 2.5n C (typical) - SEE hardness (see SEE report for details) - SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86Me V- cm2/mg(Si) - ISL70024SEH radiation acceptance (see TID report) - High dose rate (50-300rad(Si)/s): 100krad(Si) - Low dose rate (0.01rad(Si)/s): 75krad(Si) - ISL73024SEH radiation acceptance (see TID report) - Low dose rate (0.01rad(Si)/s): 75krad(Si) - Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package - Package area: 42mm2 - Full military-temperature range operation - TA = -55°C to +125°C - TJ = -55°C to +150°C - Qualified to Renesas Rad Hard Ga N FET Screening and QCI Flow (R34TB0003EU) - All screening and QCI is in accordance with MIL-PRF-38535L Class-V Figure 1. ISL70024SEH 4 Ld SMD...