ISL70023SEH
ISL70023SEH is 60A Enhancement Mode GaN Power Transistor manufactured by Intersil.
ISL70023SEH, ISL73023SEH
100V, 60A Enhancement Mode Ga N Power Transistor
The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode Ga N power transistors. These Ga N FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include mercial aerospace, medical, and nuclear power generation.
The Ga N’s exceptionally high electron mobility and low temperature coefficient allows for very low r DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
By bining the exceptional performance of the Ga N FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
Applications
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
Features
- Very low r DS(ON) 5mΩ (typical)
- Ultra low total gate charge 14n C (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 100V, VGS = 0V): 86Me V- cm2/mg(Si)
- ISL70023SEH radiation accepting testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- ISL73023SEH radiation accepting testing
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Qualified to Renesas Rad Hard Ga N FET Screening and QCI Flow (R34TB0003EU)
- All screening and QCI is in accordance with MIL-PRF-38535L Class-V
Figure 1. ISL70023SEH 4 Ld SMD...
