2N7288H mosfets equivalent, radiation hardened n-channel power mosfets.
* 9A, 250V, RDS(on) = 0.415Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined En.
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at.
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