2N7288R
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Key Features
- 9A, 250V, RDS(on) = 0.415Ω
- Second Generation Rad Hard MOSFET Results From New Design Concepts
- Photo Current
- Single Event
