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Intersil Electronic Components Datasheet

2N7288R Datasheet

Radiation Hardened N-Channel Power MOSFETs

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SEMICONDUCTOR
REGISTRATION PENDING
Available as FRS244 (D, R, H)
November 1994
2N7288D, 2N7288R
2N7288H
Radiation Hardened
N-Channel Power MOSFETs
Features
• 9A, 250V, RDS(on) = 0.415
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
• Single Event
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 7.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
- Typically Survives 1E5ions/cm2 Having an
LET 35MeV/mg/cm2 and a Range 30µm at 80% BVDSS
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod-
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-
iting and 2E12 with current limiting. Heavy ion survival from signal event drain
burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.
Package
Symbol
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-
19500. Contact the Harris Semiconductor High-Reliability Marketing group for any
desired deviations from the data sheet.
TO-257AA
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
2N7288D, R, H
250
250
9
6
27
±20
75
30
0.60
27
9
27
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1992
1
File Number 3256.1


Intersil Electronic Components Datasheet

2N7288R Datasheet

Radiation Hardened N-Channel Power MOSFETs

No Preview Available !

Specifications 2N7288D, 2N7288R, 2N7288H - Registration Pending
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
250 -
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0 4.0
Gate-Body Leakage Forward
IGSSF
VGS = +20V
- 100
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
- 100
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
Rated Avalanche Current
Drain-Source On-State Volts
IAR
VDS(on)
Time = 20µs
VGS = 10V, ID = 9A
- 27
- 3.92
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 6A
- 0.415
Turn-On Delay Time
td(on)
VDD = 125V, ID = 9A
- 46
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
tr
td(off)
tf
QG(th)
Pulse Width = 3µs
Period = 300µs, Rg = 25
0 VGS 10 (See Test Circuit)
- 100
- 368
- 124
28
Gate-Charge On State
QG(on)
29 116
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
QGM
VGP
QGS
VDD = 125V, ID = 9A
IGS1 = IGS2
0 VGS 20
55 220
2 10
4 18
Gate-Charge Drain
QGD
12 48
Diode Forward Voltage
VSD
ID = 9A, VGD = 0
0.6 1.8
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
TT
Rθjc
Rθja
I = 9A; di/dt = 100A/µs
Free Air Operation
- 840
- 1.67
- 60
UNITS
V
V
nA
nA
mA
A
V
ns
nc
V
nc
V
ns
oC/W
VDD
RL
V1
Rg
FIGURE 1. SWITCHING TIME TESTING
E1 = 0.5 BVDSS
VC = 0.75 BVDSS
DUT
IL
VDS
L
E1
VC
0.06
FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM
2


Part Number 2N7288R
Description Radiation Hardened N-Channel Power MOSFETs
Maker Intersil Corporation
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2N7288R Datasheet PDF






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